View AO4912_1147042.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4912 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard Product AO4912 is Pb-free (meets ROHS & Sony 259 specifications). AO4912L is a Green Product ordering option. AO4912 and AO4912L are electrically identical.
Features Q1
VDS (V) = 30V ID = 8.5A RDS(ON) < 17m RDS(ON) < 25m
Q2
VDS(V) = 30V ID=7A (VGS = 10V) <26m (VGS = 10V) <31m (VGS = 4.5V)
SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A
D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K K
D2
Q1
G1 S1 A
Q2
G2 S2
SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25C A Current TA=70C Pulsed Drain Current B TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward A Current TA=25C TA=70C
B
Max Q1 30 20 8.5 6.8 40 2 1.28 -55 to 150
Max Q2 30 12 7 6.4 30 2 1.28 -55 to 150
Units V V A
VGS ID IDM PD TJ, TSTG Symbol VDS IF IFM PD TJ, TSTG
W C Units V A
Maximum Schottky 30 3 2.2 20 2 1.28 -55 to 150
Pulsed Diode Forward Current Power Dissipation
A
TA=25C TA=70C Junction and Storage Temperature Range
W C
Alpha & Omega Semiconductor, Ltd.
AO4912 Parameter: Thermal Characteristics MOSFET Q1 A t 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Parameter: Thermal Characteristics MOSFET Q2 A t 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Thermal Characteristics Schottky Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Symbol RJA RJL Symbol RJA RJL Typ 48 74 35 Typ 48 74 35 Max 62.5 110 40 Max 62.5 110 40 Units C/W
Units C/W
t 10s Steady-State Steady-State
RJA RJL
47.5 71 32
62.5 110 40
C/W
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 4: Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4912
Q2 Electrical Characteristics (TJ=25C unless otherwise noted)
Symbol
Parameter
Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=7.0A TJ=125C VGS=4.5V, ID=6.0A VDS=5V, ID=7A
Min 30
Typ
Max Units V
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance
0.003
1 5 100
A nA V A
1 25
1.5 20 31.6 24.3 22 0.78
2 26 38 31 1 3
m m S V A pF pF pF
Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=15V, f=1MHz
590 162 40 0.45 6.04 VGS=4.5V, VDS=15V, ID=7.0A 1.46 2.56 3.7 VGS=10V, VDS=15V, RL=2.2, RGEN=3 IF=7A, dI/dt=100A/s IF=7A, dI/dt=100A/s 3.5 14.9 2.5 21.2 14.2
710
0.6 7.3
nC nC nC
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery time Body Diode Reverse Recovery charge
5.5 5.5 22 4 26 21
ns ns ns ns ns nC
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 4 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4912
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 10V 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics VGS=2.5V 3.5V 4.5V 3V ID(A)
20 16 12 8 4 0 0 0.5 1 1.5 2 2.5 3 3.5 VGS (Volts) Figure 2: Transfer Characteristics 125C 25C VDS=5V
30 Normalized On-Resistance 28 RDS(ON) (m) 26 24 22 20 18 16 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V VGS=4.5V
1.8 1.6 1.4 1.2 1 0.8 0 50 100 150 200 Temperature (C) Figure 4: On resistance vs. Junction Temperature ID=7A VGS=4.5V VGS=10V
70 60 RDS(ON) (m) 50 40 30 20 125C 25C ID=7A IS (A)
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25C 125C
10 2 4 6 8 10 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4912
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 1 2 3 4 5 6 Qg (nC) Figure 7: Gate-Charge Characteristics 750 VDS=15V ID=7A Capacitance (pF) 500 Ciss f=1MHz VGS=0V
250 Crss 0 0 5
Coss
10
15
20
25
30
VDS (Volts) Figure 8: Capacitance Characteristics
100.0 RDS(ON) limited 10.0 ID (A) TJ(Max)=150C, TA=25C 100s 10s Power (W)
40 TJ(Max)=150C TA=25C
30
1ms 10ms 0.1s
20
1.0
1s 10s DC
10
0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton
0.01 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1
T 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4912
Q1 Electrical Characteristics (TJ=25C unless otherwise noted)
Symbol
Parameter
Conditions ID=250A, VGS=0V (Set VR=30V VR=30V, TJ=125C VR=30V, TJ=150C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=8.5A TJ=125C VGS=4.5V, ID=7A VDS=5V, ID=8.5A IS=1A
Min 30
Typ
Max Units V
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current. by Schottky leakage) Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance Diode+Schottky Forward Voltage Maximum Body-Diode+Schottky Continuous Current
0.007 0.05 3.2 12 1 30 13.8 20 19.7 23 0.45 0.5 3.5 971 1165 17 24 25 1.8 10 20 100 3 mA nA V A m m S V A pF pF pF 0.85 23 11.2 nC nC nC nC 7.5 6.5 25 5 23 11 ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance (FET + Schottky) Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=15V, f=1MHz
190 110 0.7 19.2
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode + Schottky Reverse Recovery Time Body Diode + Schottky Reverse Recovery Charge
VGS=10V, VDS=15V, ID=8.5A
9.36 2.6 4.2 5.2
VGS=10V, VDS=15V, RL=1.8, RGEN=3 IF=8.5A, dI/dt=100A/s IF=8.5A, dI/dt=100A/s
4.4 17.3 3.3 19.3 9.4
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 4 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4912
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 25 20 ID (A) 15 10 5 0 0 1
4V 10V 4.5V 3.5V ID(A)
30 25 20 15 10 5 0 2 3 4 5 1 1.5 2 2.5 3 3.5 4 25C 125C VDS=5V
VGS=3V
VDS (Volts) Fig 1: On-Region Characteristics
VGS (Volts) Figure 2: Transfer Characteristics 1040
26 Normalized On-Resistance
1.7 1.6 1.5 1.4 ID=8.5A
180 110 0.7
22 RDS(ON) (m)
VGS=4.5V
VGS=4.5V
VGS=10V
18
R VGS=10V, VDS=15V, RL=1.8, 1.3GEN=3
VGS=10V 1.2 1.1 1 0.9 0 50 100 150 200 Temperature (C) Figure 4: On resistance vs. Junction Temperature
14
10 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
60 50 RDS(ON) (m) 40 30 20 10 2 4 25C 6 8 10 125C ID=8.5A IS (A)
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 FET+SCHOTTKY 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note F) 25C 125C
VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4912
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=15V ID=8.5A Capacitance (pF) 1250 1000 750 500 Crss 250 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Ciss f=1MHz VGS=0V
100.0
TJ(Max)=150C, TA=25C RDS(ON) limited 100s 10s Power (W)
40
1040 180 110 0.7
30
TJ(Max)=150C TA=25C
10.0 ID (A)
1ms 10ms 0.1s
20
1.0
VGS=10V, VDS=15V, RL=1.8, RGEN=3
1s 10s DC 10
0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton
0.01 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1
T 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

▲Up To Search▲

Price & Availability of AO4912

	To Download AO4912 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .